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| 2012. 11. 28 1/2 semiconductor technical data mbrf30u60cta schottky barrier type diode revision no :1 switching mode power supply application. converter & chopper application. features h average output rectified current : i o =30a. h repetitive peak reverse voltage : v rrm =60v. h fast reverse recovery time : t rr =35ns. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =15a - - 0.75 v repetitive peak reverse current (note) i rrm v rrm =rated - - 50 a reverse recovery time (note) t rr i f =1.0a, di/dt=-30a/ k - - 35 ns thermal resistance (note) r th(j-c) juction to case - - 3.0 ? /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 60 v average output rectified current (tc=114 ? ) (note) i o 30 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 350 a junction temperature t j -40 q 150 ? storage temperature range t stg -55 q 150 ? note : average forward current of centertap full wave connection. note : a value of one cell
2012. 11.28 2/2 mbrf30u60cta revision no : 1 case temperature tc ( c) |
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